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FQD3N50C, FQD3N60, FQD3N60C

Table of contents:
Info of FQD3N50C
Info of FQD3N60
Info of FQD3N60C

FQD3N50C, FQD3N60, FQD3N60C Selling Leads, Datasheet

MFG:FAIRC Package Cooled:. D/C:06+

FQD3N50C, FQD3N60, FQD3N60C Datasheet download

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Part Number: FQD3N50C

MFG: FAIRC

Package Cooled: .

D/C: 06+

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FQD3N50C General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology.

FQD3N50C Maximum Ratings

Symbol		Parameter		FQD3N50C/FQU3N50C	Units
V_DSS		Drain-Source Voltage		500	V
I_D		Drain Current	- Continuous (TC =25°C)	2.5	A
			- Continuous (TC = 100°C)	1.5	A
I_DM		Drain Current Pulsed (Note 1)		10	A
V_GSS		Gate-Source Voltage		± 30	V
E_AS		Single Pulsed Avalanche Energy (Note 2)		200	mJ
I_AR		Avalanche Current (Note 1)		2.5	A
E_AR		Repetitive Avalanche Energy (Note 1)		3.5	mJ
d _v/dt		Peak Diode Recovery dv/dt (Note 3)		4.5	V/ns
P_D	Power Dissipation (TC = 25°C) - Derate above 25°C			35 0.28	W W/°C
	Operating and Storage Temperature Range			-55 to +150	°C
T_{J, TSTG}	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds			300	°C

FQD3N50C Features

• 2.5 A, 500 V, RDS(on) = 2.5 @ VGS = 10 V
• Low gate charge ( typical 10 nC )
• Low Crss ( typical 8.5 pF)
• Fast switching
• 100 % avalanche tested
• Improved dv/dt capability

FQD3N60 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

FQD3N60 Features

• 2.4A, 600V, RDS(on) = 3.6 @VGS = 10 V
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 5.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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