MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-252 D/C:TO
FQD30N06L, FQD30N06LTM, FQD30N06TF Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-252
D/C: TO
Description: MOSFET N-CH 60V 22.7A DPAK
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PDF/DataSheet Download
Datasheet: FQD30N06L
File Size: 665304 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQD10N20
File Size: 590060 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQD10N20
File Size: 590060 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-Channel enhancement mode power field effecttransistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
|
Symbol |
Parameter |
FQD13N06/FQU13N06 |
Units |
|
VDSS |
Drain-Source Voltage |
60 |
V |
|
ID |
Drain Current- Continuous (TC = 25)
- Continuous (TC= 100) |
24 |
A |
|
15 |
A | ||
|
IDM |
Drain Current Pulsed (Note 1) |
96 |
A |
|
VGSS |
Gate-Source Voltage |
±20 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
400 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
24 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
4.4 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
|
PD |
Power Dissipation (TA = 25) * |
2.5 |
W |
|
Power Dissipation (TC = 25)
- Derate above 25 |
44 |
W | |
|
0.35 |
W/ | ||
|
TJ , TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
|
|
TL |
Maximumleadtemperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
24A, 60V, RDS(on)= 0.039 @ VGS= 10V
Low gate charge ( typical 15 nC)
Low Crss ( typical 50 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
150maximum junction temperature rating
Low level gate drive requirements allowing directoperation form logic drivers
| Technical/Catalog Information | FQD30N06LTM |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 24A |
| Rds On (Max) @ Id, Vgs | 39 mOhm @ 12A, 10V |
| Input Capacitance (Ciss) @ Vds | 1040pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 20nC @ 5V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQD30N06LTM FQD30N06LTM |
| Technical/Catalog Information | FQD30N06TF |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 22.7A |
| Rds On (Max) @ Id, Vgs | 45 mOhm @ 11.4A, 10V |
| Input Capacitance (Ciss) @ Vds | 945pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQD30N06TF FQD30N06TF |
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