FQD20N06, FQD20N06L, FQD20N06LE Selling Leads, Datasheet
MFG:FAI Package Cooled:SOT252 D/C:06+
FQD20N06, FQD20N06L, FQD20N06LE Datasheet download
Part Number: FQD20N06
MFG: FAI
Package Cooled: SOT252
D/C: 06+
FQD20N06, FQD20N06L, FQD20N06LE
- Table of contents:
Info of FQD20N06
Info of FQD20N06L
Info of FQD20N06LE
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About FQD20N06
PDF/DataSheet Download
Datasheet: FQD20N06
File Size: 676487 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQD20N06L
PDF/DataSheet Download
Datasheet: FQD20N06L
File Size: 680643 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About FQD20N06LE
PDF/DataSheet Download
Datasheet: FQD20N06LE
File Size: 671881 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
FQD20N06 General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
FQD20N06 Maximum Ratings
| Symbol | Parameter | FQD20N06 /FQU20N06 | Units |
| VDSS | Drain-Source Voltage | 60 | V |
| ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
16.8 | A |
| 10.6 | A | ||
| IDM | Drain Current - Pulsed (Note 1) | 67.2 | A |
| VGSS | Gate-Source Voltage | ±25 | V |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 155 | mJ |
| IAR | Avalanche Current (Note 1) | 16.8 | A |
| EAR | Repetitive Avalanche Energy (Note 1) | 3.8 | mJ |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 7.0 | V/ns |
| PD | Power Dissipation (TA = 25) * | 2.5 | W |
| Power Dissipation (TC = 25) - Derate above 25 |
38 | W | |
| 0.30 | W/ | ||
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | |
| TL | Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds |
300 |
FQD20N06 Features
• 16.8A, 60V, RDS(on) = 0.063Ω @ VGS = 10V
• Low gate charge ( typical 11.5 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 150 maximum junction temperature rating
• Low gate charge ( typical 11.5 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 150 maximum junction temperature rating
FQD20N06L General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
FQD20N06L Maximum Ratings
|
IS |
Maximum Continuous Drain-Source Diode Forward Current |
- |
- |
17.2 |
A | |
|
ISM |
Maximum Pulsed Drain-Source Diode Forward Current |
- |
-- |
68.8 |
A | |
|
VSD |
Drain-Source Diode Forward Voltage |
VGS = 0 V, IS = 17.2A |
- |
- |
1.5 |
V |
|
trr |
Reverse Recovery Time |
VGS = 0 V, IF = 21 A, dIF / dt = 100 A/ìs (Note 4) |
- |
- |
- |
ns |
|
Qrr |
Reverse Recovery Charge |
- |
54 |
- |
nC | |
FQD20N06L Features
• 17.2A, 60V, RDS(on) = 0.06 @ VGS = 10V
• Low gate charge ( typical 9.5 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 150oC maximum junction temperature rating
• Low level gate drive requirements allowing direct operation form logic drivers
• Low gate charge ( typical 9.5 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 150oC maximum junction temperature rating
• Low level gate drive requirements allowing direct operation form logic drivers
FQD20N06LE General Description
These N-Channel enhancement mode power field effecttransistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
FQD20N06LE Maximum Ratings
|
Symbol |
Parameter |
FQD13N06/FQU13N06 |
Units |
|
VDSS |
Drain-Source Voltage |
60 |
V |
|
ID |
Drain Current- Continuous (TC = 25)
- Continuous (TC= 100) |
17.2 |
A |
|
10.9 |
A | ||
|
IDM |
Drain Current Pulsed (Note 1) |
68.8 |
A |
|
VGSS |
Gate-Source Voltage |
±20 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
170 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
17.2 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
3.8 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
7.0 |
V/ns |
|
PD |
Power Dissipation (TA = 25) * |
2.5 |
W |
|
Power Dissipation (TC = 25)
- Derate above 25 |
38 |
W | |
|
0.30 |
W/ | ||
|
TJ , TSTG |
Operating and Storage Temperature Range |
-55 to +150 |
|
|
TL |
Maximumleadtemperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
FQD20N06LE Features
17.2A, 60V, RDS(on)= 0.06 @ VGS= 10V
Low gate charge ( typical 9.5 nC)
Low Crss ( typical 35 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
150 C maximum junction temperature rating
Low level gate drive requirements allowing directoperation form logic drivers
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