MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-252 D/C:TO
FQD18N20V2, FQD18N20V2TF, FQD18N20V2TM Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: TO-252
D/C: TO
Description: MOSFET N-CH 200V 15A DPAK
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PDF/DataSheet Download
Datasheet: FQD18N20V2
File Size: 629769 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQD10N20
File Size: 590060 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQD10N20
File Size: 590060 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency
|
Symbol |
Parameter |
FQD18N20V2/ FQU18N20V2 |
Units | |
|
VDSS |
Drain-Source Voltage |
200 |
V | |
|
ID |
Drain Current |
- Continuous (TC = 100°C) |
15 |
A |
|
|
- Continuous (TC = 25°C) |
9.75 |
A | |
|
IDM |
Drain Current Pulsed (Note 1) |
60 |
A | |
|
VGSS |
Gate-Source Voltage |
± 30 |
V | |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
340 |
mJ | |
|
IAR |
Avalanche Current (Note 1) |
15 |
A | |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
8.3 |
mJ | |
|
d v/dt |
Peak Diode Recovery dv/dt (Note 3) |
6.5 |
V/ns | |
|
PD TJ, TSTG |
Power Dissipation (TA = 25°C) |
2.5 |
W | |
|
Power Dissipation (TC = 25°C) |
83 |
W | ||
|
0.67 | ||||
|
Operating and |
-55 to +150 |
°C | ||
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
°C | |
| Technical/Catalog Information | FQD18N20V2TF |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 15A |
| Rds On (Max) @ Id, Vgs | 140 mOhm @ 7.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1080pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 26nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQD18N20V2TF FQD18N20V2TF |
| Technical/Catalog Information | FQD18N20V2TM |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 15A |
| Rds On (Max) @ Id, Vgs | 140 mOhm @ 7.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1080pF @ 25V |
| Power - Max | 2.5W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 26nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQD18N20V2TM FQD18N20V2TM |
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