FQD17N08, FQD17N08L, FQD17N10 Selling Leads, Datasheet
Package Cooled:TO-252 D/C:09+
FQD17N08, FQD17N08L, FQD17N10 Datasheet download
Part Number: FQD17N08
MFG: --
Package Cooled: TO-252
D/C: 09+
Package Cooled:TO-252 D/C:09+
FQD17N08, FQD17N08L, FQD17N10 Datasheet download
MFG: --
Package Cooled: TO-252
D/C: 09+
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PDF/DataSheet Download
Datasheet: FQD17N08
File Size: 609557 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQD17N08L
File Size: 568907 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FQD10N20
File Size: 590060 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive,high efficiency switching for DC/DC converters, and DC motor control.
Symbol | Parameter | FQD17N08 /FQU17N08 | Units |
VDSS | Drain-Source Voltage | 80 | V |
ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
12.9 | A |
8.2 | A | ||
IDM | Drain Current - Pulsed (Note 1) | 51.6 | A |
VGSS | Gate-Source Voltage | ±25 | V |
EAS | Single Pulsed Avalanche Energy (Note 2) | 100 | mJ |
IAR | Avalanche Current (Note 1) | 12.9 | A |
EAR | Repetitive Avalanche Energy (Note 1) | 4.0 | mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) | 6.5 | V/ns |
PD | Power Dissipation (TA = 25) * | 2.5 | W |
Power Dissipation (TC = 25) - Derate above 25 |
44 | W | |
0.32 | W/ | ||
TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | |
TL | Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds |
300 |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive,high efficiency switching for DC/DC converters, and DC motor control.
Symbol | Parameter | FQD17N08L /FQU17N08L | Units |
VDSS | Drain-Source Voltage | 80 | V |
ID | Drain Current - Continuous (TC = 25) - Continuous (TC = 100) |
12.9 | A |
8.2 | A | ||
IDM | Drain Current - Pulsed (Note 1) | 51.6 | A |
VGSS | Gate-Source Voltage | ±20 | V |
EAS | Single Pulsed Avalanche Energy (Note 2) | 100 | mJ |
IAR | Avalanche Current (Note 1) | 12.9 | A |
EAR | Repetitive Avalanche Energy (Note 1) | 4.0 | mJ |
dv/dt | Peak Diode Recovery dv/dt (Note 3) | 6.5 | V/ns |
PD | Power Dissipation (TA = 25) * | 2.5 | W |
Power Dissipation (TC = 25) - Derate above 25 |
40 | W | |
0.32 | W/ | ||
TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | |
TL | Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds |
300 |