MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:7850 D/C:`06+(pb-free)
FKN1N60SA, FKN2L60, FKP12200PFM1250V Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: 7850
D/C: `06+(pb-free)
Description: TRIAC 600V 1.0A TO-92
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PDF/DataSheet Download
Datasheet: FKN2L60
File Size: 130702 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FKN2L60
File Size: 130702 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FKPF10N80
File Size: 175215 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FKN1N60SA |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Triac Type | Logic - Sensitive Gate |
| Configuration | Single |
| Voltage - Off State | 600V |
| Current - On State (It (RMS) (Max) | 1A |
| Voltage - Gate Trigger (Vgt) (Max) | 2V |
| Current - Gate Trigger (Igt) (Max) | 5mA |
| Current - Hold (Ih) (Max) | 15mA |
| Current - Non Rep. Surge 50, 60Hz (Itsm) | 9A, 10A |
| Mounting Type | Through Hole |
| Package / Case | TO-92 |
| Packaging | Bulk |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FKN1N60SA FKN1N60SA |
| Symbol | Parameter | Conditions |
Ratings |
Unit | ||
| VDRM |
Repetitive Peak Off-State Voltage (Note1 ) |
800 | V | |||
| IT(RMS) |
RMS On-State Current |
Commercial frequency, sine full wave 360° conduction, TC=110°C |
12 | A | ||
| ITSM |
Surge On-State Current |
Sinewave 1 full cycle, peak value,non-repetitive |
50Hz | 120 | A | |
| 60Hz | 132 | A | ||||
| I2t | I2t for Fusing |
Value corresponding to 1 cycle of halfwave, surge on-state current, tp=10ms |
72 |
A2S | ||
| di/dt |
Critical Rate of Rise of On-State Current |
IG = 2x IGT, tr 100ns |
50 | A/s | ||
| PGM |
Peak Gate Power Dissipation |
5 | W | |||
| PG (AV) | Average Gate Power Dissipation |
0.5 |
W | |||
| VGM | Peak Gate Voltage | 10 | V | |||
| IGM |
Peak Gate Current |
2 |
A | |||
| TJ | Junction Temperature | - 40 ~ 125 | ||||
| TSTG | Storage Temperature | - 40 ~ 125 | ||||
| Viso | Isolation voltage | Ta=25°C, AC 1 minute, T1 T2 G terminal to case |
1500 |
V | ||
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