Triacs Bi-Dir Triode Thyristor Planar
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Rated Repetitive Off-State Voltage VDRM : | 800 V | On-State RMS Current (It RMS) : | 2 A |
Off-State Leakage Current @ VDRM IDRM : | 20 uA | Gate Trigger Voltage (Vgt) : | 1.5 V |
Gate Trigger Current (Igt) : | 10 mA | Holding Current (Ih Max) : | 10 mA |
Mounting Style : | Through Hole | Package / Case : | TO-220F |
Packaging : | Tube |
Symbol | Parameter | Conditions |
Ratings |
Unit | ||
VDRM |
Repetitive Peak Off-State Voltage (Note1 ) |
800 | V | |||
IT(RMS) |
RMS On-State Current |
Commercial frequency, sine full wave 360° conduction, TC=110°C |
2 | A | ||
ITSM |
Surge On-State Current |
Sinewave 1 full cycle, peak value,non-repetitive |
50Hz | 9 | A | |
60Hz | 10 | A | ||||
I2t | I2t for Fusing |
Value corresponding to 1 cycle of halfwave, surge on-state current, tp=10ms |
0.4 |
A2S | ||
di/dt |
Critical Rate of Rise of On-State Current |
IG = 2x IGT, tr 100ns |
50 | A/s | ||
PGM |
Peak Gate Power Dissipation |
3 | W | |||
PG (AV) | Average Gate Power Dissipation |
0.3 |
W | |||
VGM | Peak Gate Voltage | 10 | V | |||
IGM |
Peak Gate Current |
1.6 |
A | |||
TJ | Junction Temperature | - 40 ~ 125 | ||||
TSTG | Storage Temperature | - 40 ~ 125 | ||||
Viso | Isolation voltage | Ta=25°C, AC 1 minute, T1 T2 G terminal to case |
1500 |
V |
Technical/Catalog Information | FKPF2N80 |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Triac Type | Logic - Sensitive Gate |
Configuration | Single |
Voltage - Off State | 800V |
Current - On State (It (RMS)) (Max) | 2A |
Voltage - Gate Trigger (Vgt) (Max) | 1.5V |
Current - Gate Trigger (Igt) (Max) | 10mA |
Current - Hold (Ih) (Max) | 10mA |
Current - Non Rep. Surge 50, 60Hz (Itsm) | 9A, 10A |
Mounting Type | Through Hole |
Package / Case | TO-220F |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FKPF2N80 FKPF2N80 |