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These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
FDPF44N25 Maximum Ratings
Symbol
Parameter
FDPF44N25
Unit
VDSS
Drain-Source Voltage
250
V
ID
Drain Current - Continuous (TC= 25) - Continuous (TC= 100)
18 10.8
A A
IDM
Drain Current Pulsed (Note 1)
72
A
VGSS
Gate-Source voltage
±30
V
EAS
Single Pulsed Avalanche Energy (Note 2)
2055
mJ
IAR
I Avalanche Current (Note 1)
18
A
EAR
Repetitive Avalanche Energy (Note 1)
5.6
mJ
dv/dt
Peak Diode Recovery dv/dt (Note 3)
4.5
V/ns
PD
Power Dissipation (TC= 25) - Derate above 25
56 0.45
W W/
TJ,TSTG
Operating and Storage Temperature Range
-55to+150
°C
TL
Maximum Lead Temperature for Soldering Purpose,1/8" from Case for 5 Seconds