Position: Home  > All Categories> Integrated Circuits (ICs) > FDP14AN06LA0

FDP14AN06LA0

MOSFET 60V N-Ch PowerTrench MOSFET

product image

FDP14AN06LA0 Picture
See larger image
SeekIC No. : 00161563 Detail

FDP14AN06LA0: MOSFET 60V N-Ch PowerTrench MOSFET

FDP14AN06LA0 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
FDP14AN06LA0
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 61 A
Resistance Drain-Source RDS (on) : 0.0102 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 61 A
Resistance Drain-Source RDS (on) : 0.0102 Ohms


Features:

*rDS(ON)  = 12.8m  (Typ.), VGS = 5V, ID = 60A 
*Qg (tot) = 24nC (Typ.), VGS = 5V
* Low Miller Charge
*Low QRR Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101
Formerly developmental type 83557


Application

* Motor / Body Load Control
* ABS Systems
* Powertrain Management
* Injection Systems
* DC-DC converters and Off-line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 12V and 24V systems


Specifications

Symbol Parameter Ratings Units
VDSS

 Drain to Source Voltage 60 V
VGS
Gate to Source Voltage
±20
 V
ID
 Drain Current
Continuous (TC = 25, VGS = 10V) 
 67 A
Continuous (TC = 25, VGS = 5V)
 60 A
Continuous (TA = 25, VGS = 5V, RJA = 43/W) 10 A
Pulsed Figure 4 A
EAS
 Single Pulse Avalanche Energy (Note 1) 46 mJ
PD
 Power dissipation 125 W

Derate above 25
0.83		 W/
TJ , TSTG
 		 Operating and Storage Temperature -55 to 175  



Parameters:

Technical/Catalog InformationFDP14AN06LA0
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C67A
Rds On (Max) @ Id, Vgs11.6 mOhm @ 67A, 10V
Input Capacitance (Ciss) @ Vds 2900pF @ 25V
Power - Max125W
PackagingTube
Gate Charge (Qg) @ Vgs31nC @ 5V
Package / CaseTO-220AB
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDP14AN06LA0
FDP14AN06LA0



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Optical Inspection Equipment
AA924
A21K4B
RF and RFID
X3C26P1-30S
1P620S
View more