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FDP13AN06A0

MOSFET 60V 62a 0.0135 Ohm

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SeekIC No. : 00162137 Detail

FDP13AN06A0: MOSFET 60V 62a 0.0135 Ohm

FDP13AN06A0 Data Sheet

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Part Number:
FDP13AN06A0
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 62 A
Resistance Drain-Source RDS (on) : 0.0135 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 62 A
Resistance Drain-Source RDS (on) : 0.0135 Ohms


Features:

*rDS(ON)  = 11.5m (Typ.), VGS = 10V, ID = 62A 
*Qg (tot) = 22nC (Typ.), VGS = 10V 
* Low Miller Charge
*Low QRR  Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* Qualified to AEC Q101
Formerly developmental type 82555


Application

* Motor / Body Load Control
* ABS Systems
* Powertrain Management
* Injection Systems
* DC-DC converters and Off-line UPS
* Distributed Power Architectures and VRMs
* Primary Switch for 12V and 24V systems


Specifications

Symbol Parameter Ratings Units
VDSS

 Drain to Source Voltage 60 V
VGS
Gate to Source Voltage
±20
 V
ID
 Drain Current
Continuous (TC  = 25, VGS = 10V) 		 62 A
Continuous (TC  = 100, VGS  = 10V) 44 A
Continuous (TA  = 25, VGS = 10V, RJA = 43/W)  10.9 A
Pulsed Figure 4 A
EAS
 Single Pulse Avalanche Energy (Note 1) 56 mJ
PD Power dissipation 115 W
Derate above 25 0.77 W/
TJ , TSTG Operating and Storage Temperature -55 to 175  



Parameters:

Technical/Catalog InformationFDP13AN06A0
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C62A
Rds On (Max) @ Id, Vgs13.5 mOhm @ 62A, 10V
Input Capacitance (Ciss) @ Vds 1350pF @ 25V
Power - Max115W
PackagingTube
Gate Charge (Qg) @ Vgs29nC @ 10V
Package / CaseTO-220AB
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDP13AN06A0
FDP13AN06A0



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