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These N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
FDJ1032C Maximum Ratings
Symbol
Parameter
Q1
Q2
Units
VDSS
Drain-Source Voltage
20
20
V
VGSS
Gate-Source Voltage
±8
±12
V
ID
Drain Current Continuous (Note 1a) Pulsed
2.8
3.2
A
12
13
PD
Power Dissipation for Single Operation (Note 1a) (Note 1b)
1.5
W
0.9
TJ, TSTG
Operating and Storage Junction Temperature Range
55 to +150
°C
Thermal Characteristics
RJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
80
°C/W
RJC
Thermal Resistance, Junction-to-Case (Note 1a)
5
FDJ1032C Features
`Q12.8 A, 20 V. RDS(ON)= 160 m@ VGS= 4.5 V RDS(ON)= 230 m@ VGS= 2.5 V RDS(ON)= 390 m@ VGS= 1.8 V
`Q23.2 A, 20 V. RDS(ON)= 90 m@ VGS= 4.5 V RDS(ON)= 130 m@ VGS= 2.5 V `Low gate charge `High performance trench technology for extremely lowRDS(ON) `FLMP SC75 package: Enhanced thermal performance in industry-standard package size