MOSFET SC75 FLMP COMPLEMENTARY POWER
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Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | +/- 20 V | ||
Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 3.2 A | ||
Resistance Drain-Source RDS (on) : | 108 m Ohms | Configuration : | Dual Dual Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SC-75-6 | Packaging : | Reel |
`Q12.8 A, 20 V. RDS(ON)= 160 m@ VGS= 4.5 V
RDS(ON)= 230 m@ VGS= 2.5 V
RDS(ON)= 390 m@ VGS= 1.8 V
`Q23.2 A, 20 V. RDS(ON)= 90 m@ VGS= 4.5 V
RDS(ON)= 130 m@ VGS= 2.5 V
`Low gate charge
`High performance trench technology for extremely lowRDS(ON)
`FLMP SC75 package: Enhanced thermal performance in industry-standard package size
Symbol |
Parameter |
Q1 |
Q2 |
Units |
VDSS |
Drain-Source Voltage |
20 |
20 |
V |
VGSS |
Gate-Source Voltage |
±8 |
±12 |
V |
ID |
Drain Current Continuous (Note 1a) Pulsed |
2.8 |
3.2 |
A |
12 |
13 | |||
PD |
Power Dissipation for Single Operation (Note 1a) (Note 1b) |
1.5 |
W | |
0.9 | ||||
TJ, TSTG |
Operating and Storage Junction Temperature Range |
55 to +150 |
°C | |
Thermal Characteristics | ||||
RJA |
Thermal Resistance, Junction-to-Ambient (Note 1a) |
80 |
°C/W | |
RJC |
Thermal Resistance, Junction-to-Case (Note 1a) |
5 |
These FDJ1032C N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices FDJ1032C are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Technical/Catalog Information | FDJ1032C |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N and P-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 3.2A, 2.8A |
Rds On (Max) @ Id, Vgs | 90 mOhm @ 3.2A, 4.5V |
Input Capacitance (Ciss) @ Vds | 200pF @ 10V |
Power - Max | 900mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 3nC @ 4.5V |
Package / Case | SC75-6 FLMP |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FDJ1032C FDJ1032C |