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FDC6561AN, FDC658AP, FDC658P

Table of contents:
Info of FDC6561AN
Info of FDC658AP
Info of FDC658P

FDC6561AN, FDC658AP, FDC658P Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:6/SOT23 D/C:02+

FDC6561AN, FDC658AP, FDC658P Datasheet download

Five Points

Part Number: FDC6561AN

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: 6/SOT23

D/C: 02+

Description: MOSFET P-CH 30V 4A SSOT-6

Price Break

3000
6000
12000

Unit Price

.16250
.15938
.15625

Extended Price

487.50
956.28
1875.00

(All prices are in USD) Prices for reference only

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FDC6561AN Parameters

Technical/Catalog Information	FDC6561AN
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	2.5A
Rds On (Max) @ Id, Vgs	95 mOhm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds	220pF @ 15V
Power - Max	700mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	3.2nC @ 5V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC6561AN FDC6561AN FDC6561ANTR ND FDC6561ANTRND FDC6561ANTR

FDC6561AN General Description

These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for all applications where small size is desireable but especially low cost DC/DC conversion in battery powered systems.

FDC6561AN Maximum Ratings

Symbol	Parameter	Ratings	Units
V_DSS	Drain-Source Voltage	30	V
V_GSS	Gate-Source Voltage	±20	V
I_D	Drain Current - Continuous (Note 1a) - Pulsed	2.5	A
I_D	Drain Current - Continuous (Note 1a) - Pulsed	10	A
P_D	Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)	0.96	W
		0.9
		0.7
T_J, T_stg	Operating and Storage Junction Temperature Range	-55 to +150	°C

FDC6561AN Features

2.5 A, 30 V. R _DS(ON)= 0.095 W @ V_GS = 10 V
R _DS(ON)= 0.145 W @ V_GS = 4.5 V
Very fast switching.
Low gate charge (2.1nC typical).
SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

FDC658AP Parameters

Technical/Catalog Information	FDC658AP
Vendor	Fairchild Optoelectronics Group
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	50 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	470pF @ 15V
Power - Max	800mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	8.1nC @ 5V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC658AP FDC658AP FDC658APTR ND FDC658APTRND FDC658APTR

FDC658P Parameters

Technical/Catalog Information	FDC658P
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	50 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	750pF @ 15V
Power - Max	800mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	12nC @ 5V
Package / Case	SSOT-6
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC658P FDC658P

FDC658P General Description

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.

FDC658P Maximum Ratings

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		-30 ±20 -4 -20 1.6 0.8 -55 to 150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Power Dissipation for Single Operation	(Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

RJA
RJC

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a)
(Note 1)

78
30

°C/W
°C/W

FDC658P Features

·-4 A, -30 V. RDS(ON) = 0.050 W @ VGS = -10 V RDS(ON) = 0.075 W @ VGS = -4.5 V.
·Low gate charge (8nC typical).
·High performance trench technology for extremely low RDS(ON).
·SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

FDC658P Connection Diagram

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