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FDC2512, FDC2512-NL, FDC2612

Table of contents:
Info of FDC2512
Info of FDC2512-NL
Info of FDC2612

FDC2512, FDC2512-NL, FDC2612 Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:N/A D/C:06+

FDC2512, FDC2512-NL, FDC2612 Datasheet download

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Part Number: FDC2512

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: N/A

D/C: 06+

Description: MOSFET N-CH 200V 1.1A SSOT-6

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FDC2512 Parameters

Technical/Catalog Information	FDC2512
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	1.4A
Rds On (Max) @ Id, Vgs	425 mOhm @ 1.4A, 10V
Input Capacitance (Ciss) @ Vds	344pF @ 75V
Power - Max	800mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	11nC @ 10V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC2512 FDC2512 FDC2512DKR ND FDC2512DKRND FDC2512DKR

FDC2512 General Description

This N-Channel MOSFET has been designedspecifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

FDC2512 Maximum Ratings

Symbol	Parameter		Ratings	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage		150 ± 20 1.4 8 1.6 0.8 −55 to +150	V V A W °C
I_D	Drain Current Continuous Pulsed	(Note 1a)
P_D	Maximum Power Dissipation	(Note 1a) (Note 1b)
T_J, T_STG	Operating and Storage Junction Temperature Range

FDC2512 Features

• 1.4 A, 150 V. RDS(ON) = 425 mΩ @ VGS = 10 V RDS(ON) = 475 mΩ @ VGS = 6 V
• High performance trench technology for extremely low RDS(ON)
• Low gate charge (8nC typ)
• High power and current handling capability
• Fast switching speed

FDC2512 Typical Application

• DC/DC converter

FDC2512 Connection Diagram

FDC2612 Parameters

Technical/Catalog Information	FDC2612
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25° C	1.1A
Rds On (Max) @ Id, Vgs	725 mOhm @ 1.1A, 10V
Input Capacitance (Ciss) @ Vds	234pF @ 100V
Power - Max	800mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	11nC @ 10V
Package / Case	SSOT-6
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC2612 FDC2612

FDC2612 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

FDC2612 Maximum Ratings

Symbol	Parameter		Ratings	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage		200 ± 20 1.1 4 1.6 0.8 −55 to +150	V V A W °C
I_D	Drain Current Continuous Pulsed	(Note 1a)
P_D	Maximum Power Dissipation	(Note 1a) (Note 1b)
T_J, T_STG	Operating and Storage Junction Temperature Range

FDC2612 Features

• 1.1 A, 200 V. RDS(ON) = 725 mΩ @ VGS = 10 V
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
• Fast switching speed
• Low gate charge (8nC typical)

FDC2612 Typical Application

• DC/DC converter

FDC2612 Connection Diagram

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