FDC2512

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 150 V
Continuous Drain Current : 1.4 A
Configuration : Single Quad Drain
Package / Case : SSOT-6
Resistance Drain-Source RDS (on) : 0.425 Ohms


Features:

• 1.4 A, 150 V. RDS(ON) = 425 mΩ @ VGS = 10 V RDS(ON) = 475 mΩ @ VGS = 6 V
• High performance trench technology for extremely low RDS(ON)
• Low gate charge (8nC typ)
• High power and current handling capability
• Fast switching speed


Application

• DC/DC converter


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		150 ± 20 1.4 8 1.6 0.8 −55 to +150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Maximum Power Dissipation	(Note 1a) (Note 1b)
TJ, TSTG	Operating and Storage Junction Temperature Range

Description

This FDC2512 N-Channel MOSFET has been designedspecifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Parameters:

Technical/Catalog Information	FDC2512
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	1.4A
Rds On (Max) @ Id, Vgs	425 mOhm @ 1.4A, 10V
Input Capacitance (Ciss) @ Vds	344pF @ 75V
Power - Max	800mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	11nC @ 10V
Package / Case	SuperSOT-6
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC2512 FDC2512 FDC2512DKR ND FDC2512DKRND FDC2512DKR