MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:SOT163 D/C:03+
FDC642P, FDC642P-NL, FDC6432SH Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: SOT163
D/C: 03+
Description: MOSFET/SYNCFET N/PCH SSOT-6
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PDF/DataSheet Download
Datasheet: FDC642P
File Size: 276153 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDC05
File Size: 96843 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDC6432SH
File Size: 204161 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDC642P |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 4A |
| Rds On (Max) @ Id, Vgs | 65 mOhm @ 4A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 640pF @ 10V |
| Power - Max | 800mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 10nC @ 4.5V |
| Package / Case | SSOT-6 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDC642P FDC642P |
| Technical/Catalog Information | FDC6432SH |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N and P-Channel |
| Drain to Source Voltage (Vdss) | 30V, 12V |
| Current - Continuous Drain (Id) @ 25° C | 2.4A, 2.5A |
| Rds On (Max) @ Id, Vgs | 90 mOhm @ 2.4A, 10V |
| Input Capacitance (Ciss) @ Vds | 270pF @ 15V |
| Power - Max | 700mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 3.5nC @ 5V |
| Package / Case | SuperSOT-6 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDC6432SH FDC6432SH |
This complementary P-Channel MOSFET with SyncFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for providing an extremely low RDS(ON) in a small package.
|
Symbol |
Parameter |
Ratings |
Units | ||
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
Q1 (N) |
Q2 (P) |
V V A W °C | |
|
30 ±16 2.4 7 |
12 ±8 2.5 7 | ||||
|
ID |
Drain Current Continuous Pulsed |
(Note 1a) | |||
|
PD |
Power Dissipation for Single Operation | (Note 1a) (Note 1b) | |||
| TJ,TSTG | Operating and Storage Junction Temperature Range |
1.3 0.7 55 to +150 | |||
| RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1a) (Note 1b) (Note 1) |
100 175 60 |
°C/W |
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