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This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
FDC6401N Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current - Continuous (Note 1a)
- Pulsed
3.0
A
12
PD
Power Dissipation for Single Operation (Note 1a)
(Note 1b) (Note 1c)
0.96
W
0.9
0.7
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
FDC6401N Features
· 3.0 A, 20 V. R DS(ON)= 70 mW @ VGS = 4.5 V R DS(ON)= 95 mW @ VGS = 2.5 V · Low gate charge (3.3 nC) · High performance trench technology for extremely low R DS(ON) · High power and current handling capability
FDC6401N Typical Application
· DC/DC converter · Battery Protection · Power Management
This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages.
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
FDC6420C Maximum Ratings
Symbol
Parameter
Q1
Q2
Units
VDSS VGSS
Drain-Source Voltage Gate-Source Voltage
20 ±12 3.0 12
20 ±12 2.2 6
V V A
W
°C
ID
Drain Current Continuous Pulsed
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a) (Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
0.96 0.9 0.7 55 to +150
FDC6420C Features
` Q1 3.0 A, 20V. RDS(ON) = 70 mW @ VGS = 4.5 V RDS(ON) = 95 mW @ VGS = 2.5 V ` Q2 2.2 A, 20V. RDS(ON) = 125 mW @ VGS = 4.5 V RDS(ON) = 190 mW @ VGS = 2.5 V ` Low gate charge ` High performance trench technology for extremely low RDS(ON). ` SuperSOT 6 package: small footprint (72% smaller than SO-8); low profile (1mm thick).
