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FDC638P-NL, FDC6392S, FDC640

Table of contents:
Info of FDC638P-NL
Info of FDC6392S
Info of FDC640

FDC638P-NL, FDC6392S, FDC640 Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:2009+ROHS D/C:07+PB-Free

FDC638P-NL, FDC6392S, FDC640 Datasheet download

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Part Number: FDC6392S

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: 2009+ROHS

D/C: 07+PB-Free

Description: MOSFET/SCHOTTKY P-CH 20V 6SSOT

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FDC6392S Parameters

Technical/Catalog Information	FDC6392S
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	2.2A
Rds On (Max) @ Id, Vgs	150 mOhm @ 2.2A, 4.5V
Input Capacitance (Ciss) @ Vds	369pF @ 10V
Power - Max	700mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	5.2nC @ 4.5V
Package / Case	SSOT-6
FET Feature	Diode (Isolated)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC6392S FDC6392S FDC6392SCT ND FDC6392SCTND FDC6392SCT

FDC6392S General Description

The FDC6392S combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package.

This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.

FDC6392S Maximum Ratings

Symbol	Parameter		Ratings	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage		20 ±12 2.2 6 0.96 0.9 0.7 55 to +150 20 1	V V A W °C V A
I_D	Drain Current Continuous Pulsed	(Note 1a)
P_D	Maximum Power Dissipation	(Note 1a) (Note 1b)
T_J, T_STG	Operating and Storage Junction Temperature Range
V_RRM	Schottky Repetitive Peak Reverse Voltage
I_O	Schottky Average Forward Current	(Note 1a)

FDC6392S Features

MOSFET:
• 2.2 A, 20V. RDS(ON) = 150 mΩ @ VGS = 4.5V RDS(ON) = 200 mΩ @ VGS = 2.5V
• Low Gate Charge (3.7nC typ)
• Compact industry standard SuperSOT-6 package
Schottky:
• VF < 0.45 V @ 1 A

FDC6392S Connection Diagram

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