MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:2009+ROHS D/C:60000
FDC636P-NL, FDC637AN, FDC637AN-NL Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor (VA)
Package Cooled: 2009+ROHS
D/C: 60000
Description: MOSFET N-CH 20V 6.2A SSOT-6
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PDF/DataSheet Download
Datasheet: FDC05
File Size: 96843 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDC637AN
File Size: 246458 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDC05
File Size: 96843 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
| Technical/Catalog Information | FDC637AN |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 6.2A |
| Rds On (Max) @ Id, Vgs | 24 mOhm @ 6.2A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 1125pF @ 10V |
| Power - Max | 800mW |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 16nC @ 4.5V |
| Package / Case | SSOT-6 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDC637AN FDC637AN FDC637ANCT ND FDC637ANCTND FDC637ANCT |
This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.
|
Symbol |
Parameter |
Ratings |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
20 ±8 6.2 20 1.6 0.8 -55 to +150 |
V V A W °C | |
|
ID |
Drain Current Continuous Pulsed |
(Note 1a) | ||
|
PD |
Power Dissipation for Single Operation | (Note 1a) (Note 1b) | ||
| TJ,TSTG | Operating and Storage Junction Temperature Range | |||
| RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1a) (Note 1) |
78 30 |
°C/W °C/W |
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