MFG:Fairchild Semiconductor Category:Integrated Circuits (ICs) Package Cooled:SOT163 D/C:06+
FDC636, FDC636P, FDC636P / 636 Datasheet download
Category: Integrated Circuits (ICs)
MFG: Fairchild Semiconductor
Package Cooled: SOT163
D/C: 06+
Description: MOSFET P-CH 20V 2.8A SSOT-6
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PDF/DataSheet Download
Datasheet: FDC636P
File Size: 202959 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDC636P
File Size: 202959 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDC05
File Size: 96843 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
| Technical/Catalog Information | FDC636P |
| Vendor | Fairchild Semiconductor |
| Category | Integrated Circuits (ICs) |
| Type | High Side Switch |
| Number of Outputs | 1 |
| Voltage - Input | - |
| Package / Case | SuperSOT-6 |
| Packaging | Tape & Reel (TR) |
| Current Limit | 2.8A |
| Internal Switch(s) | Yes |
| Operating Temperature | -55°C ~ 150°C |
| Rds (On) | 130 mOhm |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDC636P FDC636P FDC636PTR ND FDC636PTRND FDC636PTR |
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
|
Symbol |
Parameter |
Ratings |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
-20 ±8 -2.8 -11 1.6 0.8 -55 to 150 |
V V A W °C | |
|
ID |
Drain Current Continuous Pulsed |
(Note 1a) | ||
|
PD |
Power Dissipation for Single Operation | (Note 1a) (Note 1b) | ||
| TJ,TSTG | Operating and Storage Junction Temperature Range | |||
| RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1a) (Note 1) |
78 30 |
°C/W °C/W |
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