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FDC633N, FDC633N/633, FDC634P

Table of contents:
Info of FDC633N
Info of FDC633N/633
Info of FDC634P

FDC633N, FDC633N/633, FDC634P Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:Sot-163 D/C:09+

FDC633N, FDC633N/633, FDC634P Datasheet download

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Part Number: FDC633N

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: Sot-163

D/C: 09+

Description: MOSFET P-CHAN 20V SSOT6

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FDC633N Parameters

Technical/Catalog Information	FDC633N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	5.2A
Rds On (Max) @ Id, Vgs	42 mOhm @ 5.2A, 4.5V
Input Capacitance (Ciss) @ Vds	538pF @ 10V
Power - Max	800mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	16nC @ 4.5V
Package / Case	SSOT-6
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC633N FDC633N FDC633NTR ND FDC633NTRND FDC633NTR

FDC633N General Description

This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching,low in-line power loss and resistance to transients are needed in a very small outline surface mount package.

FDC633N Maximum Ratings

Symbol	Parameter		Ratings	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage		30 ±8 5.2 16 1.6 0.8 -55 to 150	V V A W °C
ID	Drain Current Continuous Pulsed	(Note 1a)
PD	Power Dissipation for Single Operation	(Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

RJA
RJC

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a)
(Note 1)

78
30

°C/W
°C/W

FDC633N Features

·5.2 A, 30 V. RDS(ON) = 0.042 W @ VGS = 4.5 V RDS(ON) = 0.054 W @ VGS = 2.5 V.
·SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
·High density cell design for extremely low RDS(ON).
·Exceptional on-resistance and maximum DC current capability.

FDC633N Connection Diagram

FDC634P Parameters

Technical/Catalog Information	FDC634P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	3.5A
Rds On (Max) @ Id, Vgs	80 mOhm @ 3.5A, 4.5V
Input Capacitance (Ciss) @ Vds	779pF @ 10V
Power - Max	800mW
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	10nC @ 4.5V
Package / Case	SSOT-6
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDC634P FDC634P FDC634PCT ND FDC634PCTND FDC634PCT

FDC634P General Description

These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

FDC634P Maximum Ratings

Symbol	Parameter		Ratings	Units
V_DSSV_GSS	Drain-Source Voltage Gate-Source Voltage		-20 ±8 -3.5 -11 1.6 0.8 -55 to 150	V V
I_D	Drain Current - Continuous - Pulsed	(Note 1a)		A
P_D	Maximum Power Dissipation	(Note 1a) (Note 1b)		W
T_J, T_STG	Operating and Storage Temperature Range			°C

THERMAL CHARACTERISTICS

R_qJAR_qJC

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a)
(Note 1)

78
30

°C/W
°C/W

FDC634P Features

·-3.5 A, -20 V. RDS(ON) = 0.080 W @ VGS = -4.5 V RDS(ON) = 0.110 W @ VGS = -2.5 V.
·SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.
·High density cell design for extremely low RDS(ON).
·Exceptional on-resistance and maximum DC current capability.

FDC634P Connection Diagram

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