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These N-Channel low threshold 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.
FDC6305N Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current - Continuous (Note 1a)
- Pulsed
2.7
A
8
PD
Power Dissipation for Single Operation (Note 1a)
(Note 1b) (Note 1c)
0.96
W
0.9
0.7
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
FDC6305N Features
• 2.7 A, 20 V. R DS(ON)= 0.08 Ω @ VGS = 4.5 V R DS(ON)= 0.12 Ω @ VGS = 2.5 V • Low gate charge (3.5nC typical). • Fast switching speed. • High performance trench technology for extremelylow RDS(ON) • SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).