MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:05+ D/C:12000
FDC6304P, FDC6304P-NL, FDC6305 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor
Package Cooled: 05+
D/C: 12000
Description: MOSFET P-CH DUAL 25V SSOT-6
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PDF/DataSheet Download
Datasheet: FDC6304P
File Size: 76066 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDC05
File Size: 96843 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDC6305
File Size: 252179 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | FDC6304P |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 460mA |
| Rds On (Max) @ Id, Vgs | 1.1 Ohm @ 500mA, 4.5V |
| Input Capacitance (Ciss) @ Vds | 62pF @ 10V |
| Power - Max | 700mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 1.5nC @ 4.5V |
| Package / Case | SuperSOT-6 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDC6304P FDC6304P FDC6304PTR ND FDC6304PTRND FDC6304PTR |
These P-Channel enhancement mode field effect transistor are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
|
Symbol |
Parameter |
FDC6304P |
Units |
|
VDSS |
Drain-Source Voltage, Power Supply Voltage |
-25 |
V |
|
VGSS |
Gate-Source Voltage |
-8
|
V |
|
ID, IO |
Drain Current - Continuous
- Pulsed
|
-0.46
|
A |
|
-1 | |||
|
PD |
Maximum Power Dissipation (Note 1a)
(Note1b) |
0.9 |
W |
|
0.7 | |||
|
TJ, Tstg |
Operating and Storage Tempature Ranger |
-55 to +150 |
°C |
|
ESD |
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm) |
6 |
kV |
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