MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:SOT23-6 D/C:09+
FDC6303N, FDC6303N_D87Z, FDC6303N_F40 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor (VA)
Package Cooled: SOT23-6
D/C: 09+
Description: IC FET DGTL N-CH DUAL 25V SSOT6
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PDF/DataSheet Download
Datasheet: FDC6303N
File Size: 73860 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDC05
File Size: 96843 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: FDC05
File Size: 96843 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
| Technical/Catalog Information | FDC6303N |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 25V |
| Current - Continuous Drain (Id) @ 25° C | 680mA |
| Rds On (Max) @ Id, Vgs | 450 mOhm @ 500mA, 4.5V |
| Input Capacitance (Ciss) @ Vds | 50pF @ 10V |
| Power - Max | 700mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 2.3nC @ 4.5V |
| Package / Case | SuperSOT-6 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FDC6303N FDC6303N FDC6303NDKR ND FDC6303NDKRND FDC6303NDKR |
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
|
Symbol |
Parameter |
FDC6304P |
Units |
|
VDSS |
Drain-Source Voltage, Power Supply Voltage |
25 |
V |
|
VGSS |
Gate-Source Voltage, |
8 |
V |
|
ID, IO |
Drain Current - Continuous
- Pulsed
|
0.68 |
A |
|
2 | |||
|
PD |
Maximum Power Dissipation (Note 1a)
(Note1b) |
0.9 |
W |
|
0.7 | |||
|
TJ, Tstg |
Operating and Storage Tempature Ranger |
-55 to +150 |
°C |
|
ESD |
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm) |
6.0 |
kV |
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