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FDC606P, FDC608PZ, FDC6301N

FDC606P, FDC608PZ, FDC6301N Selling Leads, Datasheet

MFG:Fairchild Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:SOT26  D/C:0725+PB

FDC606P Picture

FDC606P, FDC608PZ, FDC6301N Datasheet download

Five Points

Part Number: FDC606P

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: SOT26

D/C: 0725+PB

Description: IC FET DGTL N-CH DUAL 25V SSOT6

Price Break

1
10
100
250
500
1000

Unit Price

.90000
.67800
.50850
.37516
.31640
.30058

Extended Price

0.90
6.78
50.85
93.79
158.20
300.58

(All prices are in USD) Prices for reference only
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  • FDC606P

  • Vendor: Fairchild Pack: SO D/C: 10+& Qty: 3000 Note: STOCK  Adddate: 2024-06-05
  • Inquire Now
  • N-STAR INT'L ELECTRONICS LIMITED   China
    Contact: Ms.Mandy   MSN:nstar2010@hotmail.com
    Tel: 86-0755-83061191
    Fax: 86-0755-83065397
    (28)
  • FDC606P

  • Vendor: Fairchild D/C: 06+& Qty: 1,000 Note: 04 OEM STK  Adddate: 2024-06-05
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  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
    Fax: --
    (0)
  • FDC606P-NL

  • Vendor: Fairchild Pack: TSOP D/C: 07+& Qty: 30000  Adddate: 2024-06-05
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  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
    Tel: 0086-755-61282699
    Fax: 0086-755-61174144
    (11)

About FDC606P

PDF/DataSheet Download

Datasheet: FDC606P

File Size: 158242 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

Download : Click here to Download

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FDC608PZ Suppliers

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  • FDC608PZ

  • Vendor: Fairchild D/C: 06+& Qty: 1,000 Note: 04 OEM STK  Adddate: 2024-06-05
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  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
    Fax: --
    (0)
  • FDC2512

  • Vendor: Fairchild D/C: 06+& Qty: 10,000 Note: 04 OEM STK  Adddate: 2024-06-05
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  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
    Fax: --
    (0)

About FDC05

PDF/DataSheet Download

Datasheet: FDC05

File Size: 96843 KB

Manufacturer: ETC [ETC]

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FDC6301N Suppliers

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  • FDC6301N

  • Vendor: FSC Pack: Original D/C: 12+& Qty: 3000000  Adddate: 2024-06-05
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  • TODENKI ELECTRONICS COMPANY   China
    Contact: Ms.Alice  
    Tel: 86-755-82565937
    Fax: 86-755-83206987
    (14)
  • FDC6301N

  • Vendor: Fairchild Pack: SOT D/C: 06+& Qty: 2416 Note: stock and original  Adddate: 2024-06-05
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  • TopChip Electronic ltd.   China
    Contact: Ms.linda   MSN:linda2007@hotmail.com
    Tel: 86-755-82567779
    Fax: 86-755-83741117
    (356)
  • FDC6301N

  • Vendor: Fairchild D/C: 04+& Qty: 485  Adddate: 2024-06-05
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  • ASK SEMICONDUCTOR LTD   China
    Contact: Mr.Subaninfo@asksemi.com   MSN:asksemiconductor@hotmail.com
    Tel: 86-0755-33060075/0755-29183325/0755-83221176
    Fax: 86-0755-33060076
    (5)
  • FDC6301N

  • D/C: 08+& Qty: 42000 Note: $0.08-same day shipment  Adddate: 2024-06-05
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  • Skyeast Intl. Ltd.   China
    Contact: Mr.RichardLiu  
    Tel: 86--755-83276226
    Fax: 86--755--83215205
    (0)
  • FDC6301N

  • Vendor: Fairchild Pack: SSOT Qty: 1200 Note: stock on hand  Adddate: 2024-06-05
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  • TCW(HK) electronic limited   China
    Contact: Mr.David   MSN:hongjijia@hotmail.com
    Tel: 86-0755-82817106
    Fax: 86-0755-83012739
    (3)
  • FDC6301N

  • D/C: 06+& Qty: 20000 Note: OEMAN  Adddate: 2024-06-05
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  • H.K.S.K Electronic Co.,Ltd   China
    Contact: Ms.browinezhong   MSN:browine_zhong@hotmail.com
    Tel: 86-0755-83243077
    Fax: 86-0755-83210427
    (0)

About FDC6301N

PDF/DataSheet Download

Datasheet: FDC6301N

File Size: 75709 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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FDC606P Parameters

Technical/Catalog InformationFDC606P
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25° C6A
Rds On (Max) @ Id, Vgs26 mOhm @ 6A, 4.5V
Input Capacitance (Ciss) @ Vds 1699pF @ 6V
Power - Max800mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs25nC @ 4.5V
Package / CaseSSOT-6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDC606P
FDC606P
FDC606PCT ND
FDC606PCTND
FDC606PCT

FDC606P General Description

This P-Channel 1.8V specified MOSFET uses Fairchild's low voltage PowerTrench process. It has been optimized for battery power management applications.  

FDC606P Maximum Ratings

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
12 
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current  Continuous  (Note 1a)
                        Pulsed
-6
A
-20
PD
Maximum Power Dissipation   (Note 1a)
                                               (Note 1b)
1.6
W
0.8
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150

FDC606P Features

6 A,  12 V.  RDS(ON) = 26 m @ VGS = 4.5 V
                           RDS(ON) = 35 m@ VGS = 2.5 V 
                           RDS(ON) = 53 m@ VGS = 1.8 V
Fast switching speed
High performance trench technology for extremely low RDS(ON)

FDC606P Typical Application

Battery management 
Load switch
Battery protection

FDC608PZ Parameters

Technical/Catalog InformationFDC608PZ
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C5.8A
Rds On (Max) @ Id, Vgs30 mOhm @ 5.8A, 4.5V
Input Capacitance (Ciss) @ Vds 1330pF @ 10V
Power - Max800mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs23nC @ 4.5V
Package / CaseSSOT-6
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDC608PZ
FDC608PZ
FDC608PZTR ND
FDC608PZTRND
FDC608PZTR

FDC6301N Parameters

Technical/Catalog InformationFDC6301N
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25° C220mA
Rds On (Max) @ Id, Vgs4 Ohm @ 400mA, 4.5V
Input Capacitance (Ciss) @ Vds 9.5pF @ 10V
Power - Max700mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs0.7nC @ 4.5V
Package / CaseSuperSOT-6
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FDC6301N
FDC6301N
FDC6301NTR ND
FDC6301NTRND
FDC6301NTR

FDC6301N General Description

These dual N-Channel logic level enhancement mode  field effect transistors are produced using Fairchild  's proprietary,high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.This  device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N-Channel  FET's can replace several digital transistors, with a variety of bias resistors.

FDC6301N Maximum Ratings

Symbol
Parameter
FDC6304P
Units
VDSS, VCC
Drain-Source Voltage, Power Supply Voltage
               25
 
V
VGSS, VIN
Gate-Source Voltage,
8
V
ID, IO
Drain Current - Continuous    
                      - Pulsed
 
0.22
A
0.5
PD
Maximum Power Dissipation (Note 1a)                      
                                             (Note1b)                                                
0.9
W
0.7
TJ, Tstg
Operating and Storage Tempature Ranger
-55 to +150
°C
ESD
Electrostatic Discharge Rating MIL-STD-883D      
Human Body Model (100pf / 1500 Ohm)        
6.0
kV

FDC6301N Features

25 V, 0.22 A  continuous, 0.5 A Peak.
             R DS(ON)= 5 W @ VGS= 2.7 V                          
             R DS(ON)=4 W  @ VGS= 4.5 V
Very low level gate drive requirements allowing  direct operation in 3V circuits. VGS(th)< 1.5V.
Gate-Source Zener for ESD ruggedness.>6kV Human Body Model.

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