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F1119M, F112, F1120

Table of contents:
Info of F1119M
Info of F112
Info of F1120

F1119M, F112, F1120 Selling Leads, Datasheet

MFG:S Package Cooled:CAN5 D/C:05+

F1119M, F112, F1120 Datasheet download

Five Points

Part Number: F1119M

MFG: S

Package Cooled: CAN5

D/C: 05+

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F1120 General Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

"Polyfet"^TM process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance

F1120 Maximum Ratings

Total Device Dissipation	Junction to Case Thermal Resistance	Maximum Junction Temperature	Storage Temperature	DC Drain Current	Drain to Gate Voltage	Drain to Source Voltage	Gate to Source Voltage
440 Watts	0.4/W	200	-65 to 150	20 A	70V	70V	30V

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