F1170

Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSourceVoltage 3800 Watts 0.45/W 200 -65 to 150 16A 70V 70V 30VDescriptionSilicon VDMOS and L...

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SeekIC No. : 004339789 Detail

F1170: Specifications TotalDeviceDissipation Junction toCase ThermalResistance MaximumJunctionTemperature StorageTemperature DC DrainCurrent Drain toGateVoltage Drain toSourceVoltage Gate toSou...

floor Price/Ceiling Price

Part Number:
F1170
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Specifications

Total
Device
Dissipation
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
Storage
Temperature
DC Drain
Current
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
3800 Watts 0.45/W 200 -65 to 150 16 A 70V 70V 30V



Description

Silicon VDMOS and LDMOS transistors F1170 designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

"Polyfet"TM process F1170 features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance


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