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The EDS2516ADTA is 256M bits SDRAMs organized as 4,194,304 words × 16 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clock.
They are packaged in 54-pin plastic TSOP (II).
EDS2516ADTA-75 Maximum Ratings
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to VSS
VT
0.5 to VDD + 0.5 ( 4.6 (max.))
V
Supply voltage relative to VSS
VDD
0.5 to +4.6
V
Short circuit output current
IOS
50
mA
Power dissipation
PD
1.0
W
Operating temperature
TA
0 to +70
°C
Storage temperature
Tstg
55 to +125
°C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
EDS2516ADTA-75 Features
• 3.3V power supply • Clock frequency: 133MHz (max.) • Single pulsed /RAS • ×16 organization • 4 banks can operate simultaneously and independently • Burst read/write operation and burst read/single write operation capability • 2 variations of burst sequence -Sequential (BL = 1, 2, 4, 8, full page) -Interleave (BL = 1, 2, 4, 8) • Programmable /CAS latency (CL): 2, 3 • Byte control by UDQM and LDQM • Refresh cycles: 8192 refresh cycles/64ms • 2 variations of refresh -Auto refresh -Self refresh • TSOP (II) package with lead free solder (Sn-Bi)