Features: • 3.3V power supply• Clock frequency: 133MHz (max.)• Single pulsed /RAS• ×16 organization• 4 banks can operate simultaneously and independently• Burst read/write operation and burst read/single write operation capability• Programmable burst lengt...
EDS1216AATA: Features: • 3.3V power supply• Clock frequency: 133MHz (max.)• Single pulsed /RAS• ×16 organization• 4 banks can operate simultaneously and independently• Burst r...
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Features: • 3.3V and 2.5V power supply• Clock frequency: 133MHz (max.)• Single p...
SpecificationsDensity: 128M bits Organization -2M words x 16 bits x 4 banks ...
Features: • 3.3V and 2.5V power supply• Clock frequency: 133MHz (max.)• Single p...
Parameter |
Symbol |
Rating |
Unit |
Voltage on any pin relative to VSS |
VT |
0.5 to VDD + 0.5 (4.6 (max.)) |
V |
Supply voltage relative to VSS |
VDD |
0.5 to +4.6 |
V |
Short circuit output current |
IOS |
50 |
mA |
Power dissipation |
PD |
1.0 |
W |
Operating temperature |
TA |
0 to +70 |
°C |
Storage temperature |
Tstg |
55 to +125 |
°C |
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
The EDS1216AATA is a 128M bits SDRAM organized as 2,097,152 words × 16 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clock.
EDS1216AATA is packaged in 54-pin plastic TSOP (II).