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EDS1216AABH

Features: • 3.3V and 2.5V power supply• Clock frequency: 133MHz (max.)• Single pulsed /RAS• ×16 organization• 4 banks can operate simultaneously and independently• Burst read/write operation and burst read/single write operation capability• Programmable bu...

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SeekIC No. : 004333872 Detail

EDS1216AABH: Features: • 3.3V and 2.5V power supply• Clock frequency: 133MHz (max.)• Single pulsed /RAS• ×16 organization• 4 banks can operate simultaneously and independently•...

EDS1216AABH Data Sheet

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Part Number:
EDS1216AABH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 3.3V and 2.5V power supply
• Clock frequency: 133MHz (max.)
• Single pulsed /RAS
• ×16 organization
• 4 banks can operate simultaneously and independently
• Burst read/write operation and burst read/single write operation capability
• Programmable burst length (BL): 1, 2, 4, 8, full page
• 2 variations of burst sequence
-Sequential (BL = 1, 2, 4, 8, full page)
-Interleave (BL = 1, 2, 4, 8)
• Programmable /CAS latency (CL): 2, 3
• Byte control by UDQM and LDQM
• Refresh cycles: 4096 refresh cycles/64ms
• 2 variations of refresh
-Auto refresh
-Self refresh
• FBGA package with lead free solder (Sn-Ag-Cu)


Pinout

Connection Diagram


Specifications

Parameter

Symbol

Rating

Unit

Voltage on any pin relative to VSS
[EDS1216AA]
[EDS1216CA]
VT
-0.5 to VDD + 0.5 ( 4.6 (max.))
V
VT
-0.5 to VDD + 0.5 ( 3.6 (max.))
V
Supply voltage relative to VSS
[EDS1216AA]
[EDS1216CA]
VDD
0.5 to +4.6
V
VDD
0.5 to +3.6
V
Short circuit output current
IOS
50
mA
Power dissipation
PD
1.0
W
Operating temperature
TA
0 to +70
°C

Storage temperature
Tstg
55 to +125
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.


Description

The EDS1216AABH, EDS1216CABH are 128M bits SDRAM organized as 2,097,152 words × 16 bits × 4 banks. All inputs and outputs are synchronized with the positive edge of the clock. Supply voltages are 3.3V (EDS1216AABH) and 2.5V (EDS1216CABH).

They are packaged in 54-ball FBGA.




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