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DTD113ES, DTD113ZK, DTD113ZK/G21

Table of contents:
Info of DTD113ES
Info of DTD113ZK
Info of DTD113ZK/G21

DTD113ES, DTD113ZK, DTD113ZK/G21 Selling Leads, Datasheet

Package Cooled:92s D/C:09+

DTD113ES, DTD113ZK, DTD113ZK/G21 Picture

DTD113ES, DTD113ZK, DTD113ZK/G21 Datasheet download

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Part Number: DTD113ES

MFG: --

Package Cooled: 92s

D/C: 09+

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DTD113ES Maximum Ratings

Paramter	Symbol	limits(DTD123E)		Unit
Paramter	Symbol	K	S	Unit
Supply voltage	V_cc	50		V
Input voltage	V_IN	-10 to +10		V
Ouput current	I_O	500		mA
Power dissipation	P_d	200	300	mW
Junction temperature	T_j	150
Storage temperature	T_stg	-55 to +150

DTD113ES Features

1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thinfilm resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making device design easy.

DTD113ZK Maximum Ratings

Paramter	Symbol	limits(DTD113Z)			Unit
		U	K	S
Supply voltage	V_cc	50			V
Input voltage	V_IN	-5 to +10			V
Ouput current	I_O	50			mA
Power dissipation	P_d	200		300	mW
Junction temperature	T_j	150
Storage temperature	T_stg	-55 to +150

DTD113ZK Features

1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making device design easy.

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