CPU165MU, CPU-5061, CPUIO Selling Leads, Datasheet
MFG:IR Package Cooled:N/A D/C:2010+
CPU165MU, CPU-5061, CPUIO Datasheet download
Part Number: CPU165MU
MFG: IR
Package Cooled: N/A
D/C: 2010+
MFG:IR Package Cooled:N/A D/C:2010+
CPU165MU, CPU-5061, CPUIO Datasheet download
MFG: IR
Package Cooled: N/A
D/C: 2010+
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Datasheet: CPU165MU
File Size: 451674 KB
Manufacturer: IRF [International Rectifier]
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PDF/DataSheet Download
Datasheet: CPU001-BB
File Size: 88809 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: CPU001-BB
File Size: 88809 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.
Parameter |
Max. |
Units | |
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE VISOL PD @ TC = 25°C PD @ TC = 100°C |
Collector-to-Emitter Voltage Continuous Collector Current, each IGBT Continuous Collector Current, each IGBT Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Isolation Voltage, any terminal to case, 1 minute Maximum Power Dissipation, each IGBT Maximum Power Dissipation, each IGBT |
600 33 17 100 100 15 100 ±20 2500 83 33 |
V A µs V VRMS W |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-40 to +150 |
°C |
Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. |
300 (0.063 in. (1.6mm) from case) 5-7 lbf•in (0.55 - 0.8 N•m) |