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CPU165MF

Features: • Fully isolated printed circuit board mount package• Switching-loss rating includes all tail losses• HEXFREDTM soft ultrafast diodes• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curveSpecifications Parameter...

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SeekIC No. : 004315867 Detail

CPU165MF: Features: • Fully isolated printed circuit board mount package• Switching-loss rating includes all tail losses• HEXFREDTM soft ultrafast diodes• Optimized for medium operat...

CPU165MF Data Sheet

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Part Number:
CPU165MF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve


Specifications

Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C		 Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 min.
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
600
42
23
120
120
15
120
±20
2500
83
33
V


A



µs
V
VRMS
W
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-40 to +150
°C
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55 - 0.8 N•m)



Description

The IGBT technology is the key to International Rectifier's advanced line of IMS (Insulated Metal Substrate) Power Modules. CPU165MF are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET. This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. This package is highly suited to motor drive applications and where space is at a premium.




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