BYQ30EX-200, BYQ32-200, BYQ40EW Selling Leads, Datasheet
MFG:PHI Package Cooled:TO-220 D/C:97+
BYQ30EX-200, BYQ32-200, BYQ40EW Datasheet download
Part Number: BYQ30EX-200
MFG: PHI
Package Cooled: TO-220
D/C: 97+
MFG:PHI Package Cooled:TO-220 D/C:97+
BYQ30EX-200, BYQ32-200, BYQ40EW Datasheet download
MFG: PHI
Package Cooled: TO-220
D/C: 97+
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PDF/DataSheet Download
Datasheet: BYQ30EX-200
File Size: 50166 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: BYQ28-100
File Size: 47612 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BYQ40EW
File Size: 57241 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VRRM | Peak repetitive reverse Voltage |
200 | V | ||
VRWM | Working peak reverse voltage |
200 | V | ||
VR | continuous reverse voltage | 200 | V | ||
I O(AV) | Average rectified output current (both diodes conducting)1 | square wave;= 0.5; Ths59 |
16 |
A | |
I FRM | Repetitive peak forward current per diode | t = 25 s;= 0.5; Ths59 | 16 | A | |
IFSM | non-repetitive peak forward current | t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRMmax) |
100 110 |
A |
I RRM | Peak repetitive reverse surge current |
tp = 2 s; = 0.001 | 0.2 | A | |
I RSM | Peak non-repetitive reverse surge current |
tp = 100 s | 0.2 | A | |
Tstg | storage temperature | -40 | +150 | ||
Tj | operating junction temperature | +150 |
Dual, common cathode, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies.
The BYQ40EW series is supplied in the conventional leaded SOT429 (TO247) package.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT | |
VRRM VRWM VR IO(AV) IFRM IFSM IRRM IRSM Tstg Tj |
Repetitive peak reverse voltage Crest working reverse voltage Continuous reverse voltage1 Output current (both diodes conducting)2 RMS forward current Repetitive peak forward current per diode Non-repetitive peak forward current per diode I2t for fusing Repetitive peak reverse current per diode Non-repetitive peak reverse current per diode Storage temperature Operating junction temperature |
BYQ40EW square wave d = 0.5; Tmb 110 °C t = 25 ms; d = 0.5; Tmb110 °C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRWM(max) tp = 2 ms; d = 0.001 tp = 100 ms |
- - - - - - - - - -40 - |
-150 150 150 150 |
-200 200 200 200 |
V V V A A A A °C °C |
40 40 300 325 0.2 0.2 150 150 |