BYC10-600, BYC10-600CT, BYC10B-600 Selling Leads, Datasheet
MFG:TO-220 Package Cooled:TO-220AB D/C:99
BYC10-600, BYC10-600CT, BYC10B-600 Datasheet download
Part Number: BYC10-600
MFG: TO-220
Package Cooled: TO-220AB
D/C: 99
BYC10-600, BYC10-600CT, BYC10B-600
- Table of contents:
Info of BYC10-600
Info of BYC10-600CT
Info of BYC10B-600
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About BYC10-600
PDF/DataSheet Download
Datasheet: BYC10-600
File Size: 62392 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BYC10-600CT
PDF/DataSheet Download
Datasheet: BYC10-600CT
File Size: 61890 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BYC10B-600
PDF/DataSheet Download
Datasheet: BYC10B-600
File Size: 65507 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BYC10-600 General Description
The BYC10-600 is supplied in the SOD59 (TO220AC) conventional leaded package.
BYC10-600 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VRRM | repetitive peak reverse voltage | 600 | V | ||
| VRRM | repetitive peak reverse voltage | 600 | V | ||
| VR | continuous reverse voltage | Tmb110 |
500 | V | |
| I F(AV) | average forward current | = 0.5; with reapplied V RRM(max) ; Tmb 82 |
10 | A | |
| IFRM | Repetitive peak forward current | = 0.5; with reapplied V RRM(max) ; Tmb 82 |
20 | A | |
| IFSM | non-repetitive peak forward current | t = 10 ms t = 8.3 ms sinusoidal; Tj = 150 prior to surge with reapplied V RWM(max) |
65 71 |
A |
| Tstg | storage temperature | -40 | 150 | ||
| Tj | operating junction temperature | 150 |
BYC10-600 Features
* Extremely fast switching
* Low reverse recovery curren
* Low thermal resistance
* Reduces switching losses in associated MOSFET
* Low reverse recovery curren
* Low thermal resistance
* Reduces switching losses in associated MOSFET
BYC10-600 Typical Application
* Active power factor correction
* Half-bridge lighting ballasts
* Half-bridge/ full-bridge switched mode power supplies.
* Half-bridge lighting ballasts
* Half-bridge/ full-bridge switched mode power supplies.
BYC10-600 Connection Diagram
BYC10-600CT General Description
The BYC10-600CT is supplied in the SOT78 (TO220AB) conventional leaded package.
BYC10-600CT Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VRRM | repetitive peak reverse voltage | 600 | V | ||
| VRRM | repetitive peak reverse voltage | 600 | V | ||
| VR | continuous reverse voltage | Tmb110 |
500 | V | |
| I F(AV) | average forward current | = 0.5; with reapplied V RRM(max) ; Tmb 82 |
10 | A | |
| IFRM | Repetitive peak forward current | = 0.5; with reapplied V RRM(max) ; Tmb 82 |
10 | A | |
| IFSM | non-repetitive peak forward current | t = 10 ms t = 8.3 ms sinusoidal; Tj = 150 prior to surge with reapplied V RWM(max) |
40 44 |
A |
| Tstg | storage temperature | -40 | 150 | ||
| Tj | operating junction temperature | 150 |
BYC10-600CT Features
* Dual diode
* Extremely fast switching
* Low reverse recovery current
* Low thermal resistance
* Reduces switching losses in associated MOSFET
* Extremely fast switching
* Low reverse recovery current
* Low thermal resistance
* Reduces switching losses in associated MOSFET
BYC10-600CT Typical Application
* Active power factor correction
* Half-bridge lighting ballasts
* Half-bridge/ full-bridge switched mode power supplies.
* Half-bridge lighting ballasts
* Half-bridge/ full-bridge switched mode power supplies.
BYC10-600CT Connection Diagram
BYC10B-600 General Description
The BYC10B-600 is supplied in the SOT404 surface mounting package.
BYC10B-600 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VRRM | repetitive peak reverse voltage | 600 | V | ||
| VRRM | repetitive peak reverse voltage | 600 | V | ||
| VR | continuous reverse voltage | Tmb110 |
500 | V | |
| I F(AV) | average forward current | = 0.5; with reapplied V RRM(max) ; Tmb 82 |
10 | A | |
| IFRM | Repetitive peak forward current | = 0.5; with reapplied V RRM(max) ; Tmb 82 |
20 | A | |
| IFSM | non-repetitive peak forward current | t = 10 ms t = 8.3 ms sinusoidal; Tj = 150 prior to surge with reapplied V RWM(max) |
65 71 |
A |
| Tstg | storage temperature | -40 | 150 | ||
| Tj | operating junction temperature | 150 |
BYC10B-600 Features
* Extremely fast switching
* Low reverse recovery current
* Low thermal resistance
* Reduces switching losses in associated MOSFET
* Low reverse recovery current
* Low thermal resistance
* Reduces switching losses in associated MOSFET
BYC10B-600 Typical Application
* Active power factor correction
* Half-bridge lighting ballasts
* Half-bridge/ full-bridge switched mode power supplies.
* Half-bridge lighting ballasts
* Half-bridge/ full-bridge switched mode power supplies.
BYC10B-600 Connection Diagram
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