Features: * Dual diode* Extremely fast switching* Low reverse recovery current* Low thermal resistance* Reduces switching losses in associated MOSFETApplication* Active power factor correction* Half-bridge lighting ballasts* Half-bridge/ full-bridge switched mode power supplies.PinoutSpecification...
BYC10-600CT: Features: * Dual diode* Extremely fast switching* Low reverse recovery current* Low thermal resistance* Reduces switching losses in associated MOSFETApplication* Active power factor correction* Half...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VRRM | repetitive peak reverse voltage | 600 | V | ||
VRRM | repetitive peak reverse voltage | 600 | V | ||
VR | continuous reverse voltage | Tmb110 |
500 | V | |
I F(AV) | average forward current | = 0.5; with reapplied V RRM(max) ; Tmb 82 |
10 | A | |
IFRM | Repetitive peak forward current | = 0.5; with reapplied V RRM(max) ; Tmb 82 |
10 | A | |
IFSM | non-repetitive peak forward current | t = 10 ms t = 8.3 ms sinusoidal; Tj = 150 prior to surge with reapplied V RWM(max) |
40 44 |
A |
Tstg | storage temperature | -40 | 150 | ||
Tj | operating junction temperature | 150 |