BUW13AF, BUW13F, BUW13W Selling Leads, Datasheet
MFG:FUJI Package Cooled:TO-3P D/C:08+
BUW13AF, BUW13F, BUW13W Datasheet download
Part Number: BUW13AF
MFG: FUJI
Package Cooled: TO-3P
D/C: 08+
MFG:FUJI Package Cooled:TO-3P D/C:08+
BUW13AF, BUW13F, BUW13W Datasheet download
MFG: FUJI
Package Cooled: TO-3P
D/C: 08+
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PDF/DataSheet Download
Datasheet: BUW13AF
File Size: 107811 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: BUW13F
File Size: 107811 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUW13W
File Size: 81102 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCESM | Collector-emitter voltage peak value BUW13F BUW12AF |
VBE = 0 | - - |
850 1000 |
V V |
VCEO | Collector-emitter voltage BUW13F BUW13AF |
open base | - - |
400 450 |
V V |
ICsat | collector saturation current BUW13F BUW13AF |
- - |
10 8 |
||
IC | base current (DC) | see Figs 3 and 4 | - | 15 | A |
ICM | base current (peak value) | tp < 20 ms; see Fig4 | - | 30 | A |
IB | base current (DC) | - | 6 | A | |
IBM | base current (peak value) | tp -20 ms | - | 9 | A |
Ptot | total power dissipation | Th 25 ; see Fig.2; note 1 | - | 37 | W |
Th 25 ; see Fig.2; note 2 | 50 | W | |||
Tstg | storage temperature | -65 | +150 | ||
Tj | junction temperature | - | 150 |
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCESM | Collector-emitter voltage peak value BUW13F BUW12AF |
VBE = 0 | - - |
850 1000 |
V V |
VCEO | Collector-emitter voltage BUW13F BUW13AF |
open base | - - |
400 450 |
V V |
ICsat | collector saturation current BUW13F BUW13AF |
- - |
10 8 |
||
IC | base current (DC) | see Figs 3 and 4 | - | 15 | A |
ICM | base current (peak value) | tp < 20 ms; see Fig4 | - | 30 | A |
IB | base current (DC) | - | 6 | A | |
IBM | base current (peak value) | tp -20 ms | - | 9 | A |
Ptot | total power dissipation | Th 25 ; see Fig.2; note 1 | - | 37 | W |
Th 25 ; see Fig.2; note 2 | 50 | W | |||
Tstg | storage temperature | -65 | +150 | ||
Tj | junction temperature | - | 150 |
Notes
1. Mounted without heatsink compound and 30 ±5 N force on centre of package.
2. Mounted with heatsink compound and 30 ±5 N force on centre of package.
High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCESM | Collector-emitter voltage peak value BUW13F BUW12AF |
VBE = 0 | - - |
850 1000 |
V V |
VCEO | Collector-emitter voltage BUW13F BUW13AF |
open base | - - |
400 450 |
V V |
IC | base current (DC) | see Figs 2 and 4 | - | 15 | A |
ICM | base current (peak value) | tp < 20 ms; see Fig2 | - | 30 | A |
IB | base current (DC) | - | 6 | A | |
IBM | base current (peak value) | tp 2 ms | - | 9 | A |
Ptot | total power dissipation | Tmb 25 ; see Fig3 | - | 175 | W |
Tstg | storage temperature | -65 | +150 | ||
Tj | junction temperature | - | 150 |