BUW11AF, BUW11F, BUW12 Selling Leads, Datasheet
MFG:SANYO Package Cooled:TO-3P D/C:03+
BUW11AF, BUW11F, BUW12 Datasheet download
Part Number: BUW11AF
MFG: SANYO
Package Cooled: TO-3P
D/C: 03+
MFG:SANYO Package Cooled:TO-3P D/C:03+
BUW11AF, BUW11F, BUW12 Datasheet download
MFG: SANYO
Package Cooled: TO-3P
D/C: 03+
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PDF/DataSheet Download
Datasheet: BUW11AF
File Size: 90590 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUW11F
File Size: 90590 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUW12
File Size: 75999 KB
Manufacturer: ANALOGICTECH [Advanced Analogic Technologies]
Download : Click here to Download
High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCESM | Collector-emitter voltage peak value BUW11F BUW11AF |
VBE = 0 | - |
850 1000 |
V V |
VCEO | Collector-emitter voltage BUW11F BUW11AF |
open base | - |
400 450 |
V V |
VCEsat | collector-emitter saturation voltage | - | 1.5 | V | |
ICsat | collector saturation current BUW11F BUW11AF |
- | 3 2.5 |
A A | |
IC | base current (DC) | see Figs 2 and 4 | - | 5 | A |
ICM | base current (peak value) | tp < 20 ms; see Fig.2 | - | 10 | A |
Ptot | total power dissipation | Th 25 °C; see Fig.3 | - | 32 | W |
tf | fall time | resistive load; see Figs 8 and 9 | - | 0.8 | s |
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT | |
VCBO |
Collector-base voltage |
BUW12 |
Open emitter |
850 |
V |
BUW12A |
1000 | ||||
VCEO |
Collector-emitter voltage |
BUW12 |
Open base |
400 |
V |
BUW12A |
450 | ||||
VEBO |
Emitter-base voltage |
Open collector |
9 |
V | |
IC |
Collector current |
8 |
A | ||
ICM |
Collector current-peak |
20 |
A | ||
IB |
Base current |
4 |
A | ||
PD |
Total power dissipation |
TC =25 |
125 |
W | |
Tj |
Junction temperature |
150 |
|||
Tstg |
Storage temperature |
-65~175 |