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BUH1015HI, BUH1215, BUH150

Table of contents:
Info of BUH1015HI
Info of BUH1215
Info of BUH150

BUH1015HI, BUH1215, BUH150 Selling Leads, Datasheet

MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-3P D/C:06+

BUH1015HI, BUH1215, BUH150 Datasheet download

Five Points

Part Number: BUH150

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: TO-3P

D/C: 06+

Description: TRANS NPN SW 700V 15A TO-220AB

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BUH1015HI General Description

The BUH1015 and BUH1015HI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds.
The BUH series is designed for use in horizontal deflection circuits in televisions and monitors.

BUH1015HI Maximum Ratings

Symbol	Parameter	Value		Unit
V_CBO	Collector-Base Voltage (I_E = 0)	1500		V
V_CEO	Collector-Emitter Voltage (I_B = 0)	700		V
V_EBO	Emitter-Base Voltage (I_C = 0)	10		V
I_C	Collector Current	14		A
I_CM	Collector Peak Current (t_p < 5 ms)	18		A
I_B	Base Current	8		A
I_CM	Collector Peak Current (t_p < 5 ms)	11		A
P_tot	Total Dissipation at T_c = 25	160	70	W
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

BUH1015HI Features

STMicroelectronics PREFERRED SALESTYPES
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED

BUH1015HI Typical Application

HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS

BUH1215 General Description

The BUH1215 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.
The BUH series is designed for use in horizontal deflection circuits in televisions and monitors.

BUH1215 Maximum Ratings

Symbol	Parameter	Value	Unit
V_CBO	Collector-Base Voltage (I_E = 0)	1500	V
V_CEO	Collector-Emitter Voltage (I_B = 0)	700	V
V_EBO	Emitter-Base Voltage (I_C = 0)	10	V
I_C	Collector Current	16	A
I_CM	Collector Peak Current (t_p < 5 ms)	22	A
I_B	Base Current	9	A
I_CM	Collector Peak Current (t_p < 5 ms)	12	A
P_tot	Total Dissipation at T_c = 25	200	W
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

BUH1215 Features

STMicroelectronics PREFERRED SALESTYPE
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED

BUH1215 Typical Application

HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS

BUH150 Parameters

Technical/Catalog Information	BUH150
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	700V
Current - Collector (Ic) (Max)	15A
Power - Max	150W
DC Current Gain (hFE) (Min) @ Ic, Vce	4 @ 20A, 5V
Vce Saturation (Max) @ Ib, Ic	400mV @ 400mA, 2A
Frequency - Transition	23MHz
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BUH150 BUH150

BUH150 General Description

The BUH150 has an application specific stateofart die designed for use in 150 Watts Halogen electronic transformers.

This power transistor is specifically designed to sustain the large inrush current during either the startup conditions or under a short circuit across the load.

BUH150 Maximum Ratings

Rating	Symbol	Value	Unit
CollectorEmitter Sustaining Voltage	V_CEO	400	Vdc
CollectorBase Breakdown Voltage	V_CBO	700	Vdc
CollectorEmitter Breakdown Voltage	V_CES	700	Vdc
EmitterBase Voltage	V_EBO	10	Vdc
Collector Current - Continuous - Peak (1)	I_C I_CM	15 25	Adc
Base Current - Continuous - Peak (1)	I_B I_BM	6 12	Adc
Total Device Dissipation @ TC = 25 Derate above 25°C	P_D	150 1.2	Watt W/
Operating and Storage Temperature	T_J, T_stg	65 to 150

BUH150 Features

• Improved Efficiency Due to the Low Base Drive Requirements:
- High and Flat DC Current Gain hFE
- Fast Switching
• Robustness Thanks to the Technology Developed to Manufacture this Device
• Motorola "6 SIGMA" Philosophy Provides Tight and Reproducible Parametric Distributions

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