BUH150

Transistors Bipolar (BJT) 15A 400V 150W NPN

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SeekIC No. : 00214279 Detail

BUH150: Transistors Bipolar (BJT) 15A 400V 150W NPN

floor Price/Ceiling Price

Part Number:
BUH150
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 400 V
Emitter- Base Voltage VEBO : 10 V Maximum DC Collector Current : 15 A
DC Collector/Base Gain hfe Min : 4 Configuration : Single
Maximum Operating Frequency : 23 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-220AB
Packaging : Tube    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 400 V
Package / Case : TO-220AB
Packaging : Tube
Maximum DC Collector Current : 15 A
Emitter- Base Voltage VEBO : 10 V
DC Collector/Base Gain hfe Min : 4
Maximum Operating Frequency : 23 MHz


Features:

• Improved Efficiency Due to the Low Base Drive Requirements:
- High and Flat DC Current Gain hFE
- Fast Switching
• Robustness Thanks to the Technology Developed to Manufacture this Device
• Motorola "6 SIGMA" Philosophy Provides Tight and Reproducible Parametric Distributions



Specifications

Rating
Symbol
Value
Unit
CollectorEmitter Sustaining Voltage
VCEO
400
Vdc
CollectorBase Breakdown Voltage
VCBO
700
Vdc
CollectorEmitter Breakdown Voltage
VCES
700
Vdc
EmitterBase Voltage
VEBO
10
Vdc
Collector Current - Continuous
                  - Peak (1)
IC
ICM
15
25
Adc
Base Current - Continuous
             - Peak (1)
IB
IBM
6
12
Adc
*Total Device Dissipation @ TC = 25
*Derate above 25°C
PD
150
1.2
Watt
W/
Operating and Storage Temperature
TJ, Tstg
65 to 150



Description

The BUH150 has an application specific stateofart die designed for use in 150 Watts Halogen electronic transformers.

This power transistor BUH150 is specifically designed to sustain the large inrush current during either the startup conditions or under a short circuit across the load.


Parameters:

Technical/Catalog InformationBUH150
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)700V
Current - Collector (Ic) (Max)15A
Power - Max150W
DC Current Gain (hFE) (Min) @ Ic, Vce4 @ 20A, 5V
Vce Saturation (Max) @ Ib, Ic400mV @ 400mA, 2A
Frequency - Transition23MHz
Current - Collector Cutoff (Max)100A
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names BUH150
BUH150



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