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BU508AFI, BU508A-M, BU508AT

Table of contents:
Info of BU508AFI
Info of BU508A-M
Info of BU508AT

BU508AFI, BU508A-M, BU508AT Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:N/A D/C:0536+

BU508AFI, BU508A-M, BU508AT Datasheet download

Five Points

Part Number: BU508AFI

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: N/A

D/C: 0536+

Description: TRANSISTOR NPN ISOWATT218

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BU508AFI Parameters

Technical/Catalog Information	BU508AFI
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	700V
Current - Collector (Ic) (Max)	8A
Power - Max	150W
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Vce Saturation (Max) @ Ib, Ic	1V @ 2A, 4.5A
Frequency - Transition	7MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	ISOWATT-218-3
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BU508AFI BU508AFI

BU508AFI General Description

The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switchingspeeds.

BU508AFI Maximum Ratings

Symbol	Parameter	Value			Unit
V_CES	Collector-Emitter Voltage (V_BE =0)	1500			V
V_CEO	Collector-Emitter Voltage (I_B = 0)	700			V
V_EBO	Emitter-Base Voltage (I_C =0)	10			V
I_C	Collector Current	8			A
I_CM	Collector Peak Current (t_p <5ms)	15			A
		TO - 3	TO - 218	ISOWATT21
P_tot	Total Dissipation at Tc =25	150	125	50	W
T_stg	Storage Temperature	-65 to 175	-65 to 150	-65 to 150
T_j	Max. Operating Junction Temperature	175	150	150
R_thj-case	Thermal Resistance Junction-case Max	1	1	2.5	/W

BU508AFI Typical Application

HORIZONTALDEFLECTIONFOR COLOUR TV

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