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The BTS5231-2GS is designed as one kind of smart high-side power switch. The general description of this device are:(1)N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS 80V technology.; (3)Providing embedded protective functions; (4)An array of resistors is integrated in order to reduce the external components.
The BTS5231-2GS can be used in (1)uC compatible high-side power switch with diagnostic feedback for 12V and 24V and 42V grounded loads; (2)all types of resistive, inductive and capacitive loads; (3)most suitable for inductive loads; (4)replaces electromechanical relays, fuses and discrete circuits. And the basic functions of it are:(1)CMOS compatible input; (2)improved electromagnetic compatibility (EMC); (3)fast demagnetization of inductive loads; (4)stable behaviour at undervoltage; (5)wide operating voltage range; (6)logic ground independent from load ground; (7)optimized inverscurrent capability.
The absolute maximum ratings of the BTS5231-2GS can be summarized as:(1)supply voltage:58 V;(2)supply voltage for full short circuit protection:50 V;(3)output voltage to Vbb:70 V;(4)negative voltage slope at output:20 V/s;(5)load current:IL(LIM) A;(6)operating temperature range:-40 to +150;(7)storage temperature range:-55 to +150;(8)power dissipation (DC):3.0 W;(9)status pull up voltage:±42 V. If you want to know more information such as the electrical characteristics about the BTS5231-2GS, please download the datasheet in www.seekic.com or www.chinaicmart.com .