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BTS113, BTS113A, BTS113AE3045A

Table of contents:
Info of BTS113
Info of BTS113A
Info of BTS113AE3045A

BTS113, BTS113A, BTS113AE3045A Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

BTS113, BTS113A, BTS113AE3045A Datasheet download

Five Points

Part Number: BTS113

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: .

D/C: 06+

Description: MOSFET N-CHAN 60V TO-220AB

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BTS113A Parameters

Technical/Catalog Information	BTS113A
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	11.5A
Rds On (Max) @ Id, Vgs	170 mOhm @ 5.8A, 4.5V
Input Capacitance (Ciss) @ Vds	560pF @ 25V
Power - Max	40W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	-
Package / Case	TO-220AB
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BTS113A BTS113A

BTS113A Maximum Ratings

Parameter	Symbol	Values	Unit
Drain-source voltage	V_DS	60	V
Drain-gate voltage, R_GS = 20 k	V_DGR	60
Gate-source voltage	V_GS	± 10
Continuous drain current, T_C = 25 °C	I_D	11.5	A
ISO drain current T_C = 85 °C, V_GS = 10 V, V_DS = 0.5 V	I_D-ISO	2.2
Pulsed drain current, T_C = 25 °C	I_{D puls}	46
Short circuit current, T_j = 55 ... + 150 °C	I_SC	27
Short circuit dissipation, T_j = 55 ... + 150 °C	P_SCmax	400	W
Power dissipation	P_tot	40	W
Operating and storage temperature range	T_j, T_stg	55 ... + 150	°C
DIN humidity category, DIN 40 040		E
IEC climatic category, DIN IEC 68-1		55/150/56
Thermal resistance Chip-case Chip-ambient	R_{th JC} R_{th JA}	3.1 75	K/W

BTS113A Features

N channel
Logic level
Enhancement mode
Temperature sensor with thyristor characteristic
The drain pin is electrically shorted to the tab

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