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BTS110, BTS112A, BTS112-A SMD

Table of contents:
Info of BTS110
Info of BTS112A
Info of BTS112-A SMD

BTS110, BTS112A, BTS112-A SMD Selling Leads, Datasheet

MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:. D/C:07+

BTS110, BTS112A, BTS112-A SMD Datasheet download

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Part Number: BTS110

Category: Discrete Semiconductor Products

MFG: Infineon Technologies

Package Cooled: .

D/C: 07+

Description: MOSFET N-CH 100V 10A TO-220

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BTS110 Parameters

Technical/Catalog Information	BTS110
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	200 mOhm @ 5A, 10V
Input Capacitance (Ciss) @ Vds	600pF @ 25V
Power - Max	40W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	-
Package / Case	TO-220
FET Feature	Standard
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BTS110 BTS110

BTS110 Maximum Ratings

Parameter	Symbol	Values	Unit
Drain-source voltage	V_DS	100	V
Drain-gate voltage, R_GS = 20 k	V_DGR	100
Gate-source voltage	V_GS	± 20
Continuous drain current, T_C = 25 °C	I_D	10	A
ISO drain current T_C = 85 °C, V_GS = 10 V, V_DS = 0.5 V	I_D-ISO	1.75
Pulsed drain current, T_C = 25 °C	I_{D puls}	40
Short circuit current, T_j = 55 ... + 150 °C	I_SC	37
Short circuit dissipation, T_j = 55 ... + 150 °C	P_SCmax	500	W
Power dissipation	P_tot	40	W
Operating and storage temperature range	T_j, T_stg	55 ... + 150	°C
DIN humidity category, DIN 40 040		E
IEC climatic category, DIN IEC 68-1		55/150/56
Thermal resistance Chip-case Chip-ambient	R_{th JC} R_{th JA}	3.1 75	K/W

BTS110 Features

N channel
Enhancement mode
Temperature sensor with thyristor characteristic
The drain pin is electrically shorted to the tab

BTS112A Maximum Ratings

Parameter	Symbol	Value	Unit
Drain-source voltage	V_DS	60	V
Drain-gate voltage, R_GS = 20 k	V_DGR	60
Gate-source voltage	V_GS	±20
Continuous drain current,T_C = 33 °C	I_D	12	A
ISO drain current T_C = 85 °C,V_GS = 10 V, V_DS 0.5 V	I_D(ISO)	2.5
Pulsed drain current,T_C = 25 °C	I_{D puls}	48
Short circuit current,T_j = -55...+150 °C	I_SC	27
Short circuit dissipation,T_j = -55...+150 °C	P_SCmax	400	W
Power dissipation	P_tot	40	W
Operating and storage temperature range	T_{j,T_stg}	-55 ...+150	°C
DIN humidity category, DIN 40 040		E
IEC climatic category, DIN IEC 68-1		55/150/56
Thermal resistance Chip-case Chip-ambient	R_{th JC} R_{th JA}	3.1 75	K/W

BTS112A Features

N channel
Enhancement mode
Temperature sensor with thyristor characteristic
The drain pin is electricalIy shorted to the tab

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