BTH151S-650R, BTH2T2TA, BTH7740G Selling Leads, Datasheet
MFG:NXP Package Cooled:SOT428 D/C:2010+
BTH151S-650R, BTH2T2TA, BTH7740G Datasheet download
Part Number: BTH151S-650R
MFG: NXP
Package Cooled: SOT428
D/C: 2010+
BTH151S-650R, BTH2T2TA, BTH7740G
- Table of contents:
Info of BTH151S-650R
Info of BTH2T2TA
Info of BTH7740G
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About BTH151S-650R
PDF/DataSheet Download
Datasheet: BTH151S-650R
File Size: 43456 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BTH151S-650R
PDF/DataSheet Download
Datasheet: BTH151S-650R
File Size: 43456 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BTH151S-650R
PDF/DataSheet Download
Datasheet: BTH151S-650R
File Size: 43456 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BTH151S-650R General Description
Passivated thyristor in a plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. This thyristor has a high repetitive surge specification which makes it suitable for applications where high inrush currents or stall currents are likely to occur on a repetitive basis.
BTH151S-650R Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
|
VDRM, |
Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current Repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature |
half sine wave; Tmb 103 °C all conduction angles half sine wave; Tj = 25 °C prior to surge t = 10 ms t = 8.3 ms t = 10ms, = 3s, Tmb 45°C, no. of surges = 100k t = 10 ms ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/µs over any 20 ms period |
- |
1650 |
V |
BTH151S-650R Connection Diagram
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