BTH151S-650R

Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDRM, VRRM IT(AV) IT(RMS) ITSM ITRM I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj	Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current Repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature	half sine wave; Tmb 103 °C all conduction angles half sine wave; Tj = 25 °C prior to surge t = 10 ms t = 8.3 ms t = 10ms, = 3s, Tmb 45°C, no. of surges = 100k t = 10 ms ITM = 20 A; IG = 50 mA; dIG/dt = 50 mA/µs over any 20 ms period	- - - - - - - - - - - - - -40 -	1650 7.5 12 110 121 60 61 50 2 5 5 5 0.5 150 125	V A A A A A A2s A/µs A V V W W

Description

Passivated thyristor BTH151S-650R in a plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. This thyristor BTH151S-650R has a high repetitive surge specification which makes it suitable for applications where high inrush currents or stall currents are likely to occur on a repetitive basis.