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BLA1011-2, BLA1011-200, BLA1011-200H

Table of contents:
Info of BLA1011-2
Info of BLA1011-200
Info of BLA1011-200H

BLA1011-2, BLA1011-200, BLA1011-200H Selling Leads, Datasheet

MFG:PHILIPS Package Cooled:N/A D/C:N/A

BLA1011-2, BLA1011-200, BLA1011-200H Picture

BLA1011-2, BLA1011-200, BLA1011-200H Datasheet download

Five Points

Part Number: BLA1011-2

MFG: PHILIPS

Package Cooled: N/A

D/C: N/A

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BLA1011-2 General Description

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base.

BLA1011-2 Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage			75	V
VGS	gate-source voltage			±15	V
ID	DC drain current			2.2	A
Ptot	total power dissipation	up to Tmb = 25 C;		10	W
Tstg	storage temperature		-65	150	C
Tj	junction temperature			200	C

BLA1011-2 Features

· High power gain
· Easy power control
· Excellent ruggedness
· Source on mounting base eliminates DC isolators, reducing common mode inductance.

BLA1011-2 Typical Application

· Avionics applications in the 1030 to 1090 MHz frequency range.

BLA1011-200 General Description

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange.

BLA1011-200 Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DS	drain-source voltage		−	65	V
V_GS	gate-source voltage		−	±15	V
P_tot	total power dissipation	T_h 25 °C;T_p =50 µs; =2%	−	tbd	A
T_stg	storage temperature		−65	+150	°C
T_j	junction temperature		−	200	°C

BLA1011-200 Features

• High power gain
• Easy power control
• Excellent ruggedness
• Source on mounting base eliminates DC isolators, reducing common mode inductance.

BLA1011-200 Typical Application

• Avionics transmitter applications in the 1030 to 1090 MHz frequency range.

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