BLA0912-250

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Gain : 13 dB
Output Power : 250 W
Frequency : 0.96 GHz to 1.215 GHz
Package / Case : SOT-502A
Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 22 V
Continuous Drain Current : 300 mA


Features:

*High power gain
*Easy power control
*Excellent ruggedness
* Source on mounting base eliminates DC isolators, reducing common mode inductance.


Application

n Avionics transmitter applications in the 960 MHz to 1215 MHz frequency range such as Mode-S, TCAS and JTIDS, DME or TACAN.


Description

Silicon N-channel enhancement mode lateral D-MOS transistor BLA0912-250 encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange.