Transistors RF MOSFET Power LDMOS TNS
BLA0912-250,112: Transistors RF MOSFET Power LDMOS TNS
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Transistors RF MOSFET Power TRANS LDMOS NCH 75V
Configuration : | Single | Transistor Polarity : | N-Channel |
Frequency : | 0.96 GHz to 1.215 GHz | Gain : | 13 dB |
Output Power : | 250 W | Drain-Source Breakdown Voltage : | 75 V |
Continuous Drain Current : | 300 mA | Gate-Source Breakdown Voltage : | +/- 22 V |
Maximum Operating Temperature : | + 150 C | Package / Case : | SOT-502A |
Packaging : | Tube |
Technical/Catalog Information | BLA0912-250,112 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | LDMOS |
Voltage - Rated | 75V |
Current Rating | 1uA |
Package / Case | 2-LDMOST, SOT502A |
Packaging | Bulk |
Drawing Number | 568; SOT502; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BLA0912 250,112 BLA0912250,112 |