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BF822W, BF823, BF823/T1 PBF

Table of contents:
Info of BF822W
Info of BF823
Info of BF823/T1 PBF

BF822W, BF823, BF823/T1 PBF Selling Leads, Datasheet

MFG:PHILIPS/NXP Package Cooled:SOT-23 D/C:09+

BF822W, BF823, BF823/T1 PBF Datasheet download

Five Points

Part Number: BF822W

MFG: PHILIPS/NXP

Package Cooled: SOT-23

D/C: 09+

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BF822W General Description

NPN high-voltage transistor in a SOT323 plastic package.

BF822W Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_CBO	collector-base voltage	open emitter
	BF820W		-	300	V
	BF822W		-	250	V
V_CEO	collector-emitter voltage	open base
	BF820W		-	300	V
	BF822W		-	250	V
V_EBO	emitter-base voltage	open collector	-	5	V
I_C	collector current (DC)		-	50	mA
I_CM	peak collector current		-	100	mA
I_BM	peak base current		-	50	mA
P_tot	total power dissipation	T_amb 75°C; note 1	-	200	W
T_stg	storage temperature		-65	+150	°C
T_j	junction temperature		-	150	°C
T_amb	operating ambient temperature		-65	+150	°C

BF822W Features

· Low current (max. 50 mA)
· High voltage (max. 300 V).

BF822W Typical Application

· Telephony and professional communication equipment.

BF822W Connection Diagram

BF823 Maximum Ratings

		Symbol	Value	Unit
Collector-Base Voltage	BF821 BF823	-V_CBO -V_CBO	300 250	V V
Collector-Emitter Voltage	BF823	-V_CEO	250	V
Collector-Emitter Voltage	BF821	-V_CER	300	V
Emitter-Base Voltage		-V_EBO	5	V
Collector Current		-I_C	50	mA
Peak Collector Current		-I_CM	100	mA
Power Dissipation at T_SB = 50 °C		P_tot	300¹⁾	mW
Junction Temperature		T_j	150	°C
Storage Temperature Range		T_S	65 to +150	°C
1) Device on fiberglass substrate, see layout

BF823 Features

PNP Silicon Epitaxial Planar Transistors especially suited for application in class- B video output stages of TV receivers and monitors.
As complementary types, the NPN transistors BF820 and BF822 are recommended.

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